general features v ds = 20v,i d = 6a r ds(on) < 35m ? @ v gs =2.5v r ds(on) < 28m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application uni-directional load switch bi-directional load switch d g s schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity MSN3420 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v drain current-continuous i d 6 a drain current-pulsed (note 1) i dm 30 a maximum power dissipation p d 1.25 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 100 /w MSN3420 20v(d-s) n-channel enhancement mode power mos fet lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
gate-body leakage current i gss v gs =10v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.7 1.0 v v gs =2.5v, i d =4.0 a - 27 35 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =5.0a - 20 28 m ? forward transconductance g fs v ds =5v,i d =6a - 25 - s dynamic characteristics (note4) input capacitance c lss - 515 - pf output capacitance c oss - 90 - pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz - 72 - pf switching characteristics (note 4) turn-on delay time t d(on) - 3 - ns turn-on rise time t r - 7.5 - ns turn-off delay time t d(off) - 20 - ns turn-off fall time t f v dd =10v, r l =1.7 ? v gs =10v,r gen =3 ? - 6 - ns total gate charge q g - 12 - nc gate-source charge q gs - 1 - nc gate-drain charge q gd v ds =10v,i d =6a,v gs =10v - 2 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1a - - 1.2 v diode forward current (note 2) i s - - 6 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 22 - v zero gate voltage drain current i dss v ds =20v,v gs =0v - - 1 a more semiconductor company limited http://www.moresemi.com 2/6 MSN3420
typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit vds drain-source voltage (v) figure 3 output characteristics i d - drain current (a) figure 5 drain-source on-resistance v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms vgs gate-source voltage (v) figure 4 transfer characteristics t j -junction temperature( ) figure 6 drain-source on-resistance rdson on-resistance(m ) normalized on-resistance i d - drain current (a) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSN3420
vgs gate-source voltage (v) figure7 rdson vs vgs qg gate charge (nc) figure 9 gate charge vds drain-source voltage (v) figure 11 capacitance vs vds t j -junction temperature( ) figure 8 power dissipation vds drain-source voltage (v) figure 10 source- drain diode forward vds drain-source voltage (v) figure 12 safe operation area i d - drain current ( a ) i s - reverse drain current ( a ) vgs gate-source voltage (v) c capacitance (pf) rdson on-resistance(m ) p d power(w) more semiconductor company limited http://www.moresemi.com 4/6 MSN3420
square wave pluse duration(sec) figure 13 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance more semiconductor company limited http://www.moresemi.com 5/6 MSN3420
sot-23 package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 more semiconductor company limited http://www.moresemi.com 6/6 MSN3420
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